Modeling of dislocation dynamics in germanium Czochralski growth
نویسندگان
چکیده
منابع مشابه
Three-dimensional numerical simulation of temperature and flow fields in a Czochralski growth of germanium
For a Czochralski growth of Ge crystal, thermal fields have been analysed numerically using the three-dimensional finite volume method (FLUENT package). The arrangement used in a real Czochralski crystal growth lab included a graphite crucible, heat shield, heating device, thermal insulation and chamber including two gas outlets. We have considered two cases for calculations, which are configur...
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Modeling of heat transfer is presented for the entire Czochralski Si-growth furnace. The axisymmetric steady-state approach with moving computational grids is used. Melt turbulent flow, inert gas flow, heat transfer in solid parts, and radiative heat transfer in the system are considered. The Reynolds-averaged Navier-Stokes equations written with the Boussinesq approximation and the energy equa...
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Critical stresses necessary to generate dislocation glide loops in Czochralski silicon containing oxide precipitates have been investigated. Using three-point bending and etching techniques, it was possible to determine the minimum shear stress required to generate dislocation glide loops from controlled distribution of precipitates under constant-stress conditions. The generation of glide disl...
متن کاملMeasurement and modeling of ultrafast carrier dynamics and transport in germanium/silicon-germanium quantum wells.
We measure the intervalley scattering time of electrons in the conduction band of Ge quantum wells from the direct Γ valley to the indirect L valley to be ~185 fs using a pump-probe setup at 1570 nm. We relate this to the width of the exciton peak seen in the absorption spectra of this material, and show that these quantum wells could be used as a fast saturable absorber with a saturation fluen...
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We propose a model to study the plasticity of ice single crystals by numerical simulations. The model includes the long-range character of the interaction among dislocations, as well as the possibility of mutual annihilation of these line defects characterized by its Burgers vector. A multiplication mechanism representing the activation of Frank-Read sources due to dislocation pinning is also i...
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ژورنال
عنوان ژورنال: Journal of Crystal Growth
سال: 2017
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2017.01.032